Related papers: Double quantum dot with tunable coupling in an enh…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is…
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…
A two-dimensional arrangement of quantum dots with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…