Related papers: Variable Threshold MOSFET Approach (Through Dynami…
In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND…
A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can…
Thermal-Aware Scheduling (TAS) provides methods to manage the thermal dissipation of a computing chip during task execution. These methods aim to avoid issues such as accelerated aging of the device, premature failure and degraded chip…
This paper presents a design flow for an improved selective multi-threshold(Selective-MT) circuit. The Selective-MT circuit is improved so that plural MT-cells can share one switch transistor. We propose the design methodology from…
On-chip buses are typically designed to meet performance constraints at worst-case conditions, including process corner, temperature, IR-drop, and neighboring net switching pattern. This can result in significant performance slack at more…
The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects…
The input tokens to Vision Transformers carry little semantic meaning as they are defined as regular equal-sized patches of the input image, regardless of its content. However, processing uniform background areas of an image should not…
The recent demonstration of current-driven magnetic domain wall logic [Z. Luo et al., Nature 579:214] was based on a three-input logic gate that was identified as a reconfigurable NAND/NOR function. We reinterpret this logic gate as a…
Practical memristor came into picture just few years back and instantly became the topic of interest for researchers and scientists. Memristor is the fourth basic two-terminal passive circuit element apart from well known resistor,…
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…
This paper proposes the implementation of programmable threshold logic gate (TLG) crossbar array based on modified TLG cells for high speed processing and computation. The proposed TLG array operation does not depend on input signal and…
For microprocessors used in real-time embedded systems, minimizing power consumption is difficult due to the timing constraints. Dynamic voltage scaling (DVS) has been incorporated into modern microprocessors as a promising technique for…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…
Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic…
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching…
We propose a gate optimization method, which we call variational quantum gate optimization (VQGO). VQGO is a method to construct a target multi-qubit gate by optimizing a parametrized quantum circuit which consists of tunable single-qubit…
Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical…
This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…