Related papers: Variable Threshold MOSFET Approach (Through Dynami…
A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…
There is a trade-off between transient performance and line current distortion of the DC bus voltage control of single-phase grid-connected voltage source converters. This paper presents an improved DC bus voltage control scheme of such…
Mathematically-secure cryptographic algorithms leak significant side channel information through their power supplies when implemented on a physical platform. These side channel leakages can be exploited by an attacker to extract the secret…
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…
This paper presents a novel dissipativity-based distributed droop-free control approach for voltage regulation and current sharing in DC microgrids (MGs) comprised of an interconnected set of distributed generators (DGs), loads, and power…
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…
We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and…
Voltage Overscaling (VOS) is one of the well-known techniques to increase the energy efficiency of arithmetic units. Also, it can provide significant lifetime improvements, while still meeting the accuracy requirements of inherently…
This paper presents a fully-integrated CMOS voltage reference designed in a 90 nm process node using low voltage threshold (LVT) transistor models. The voltage reference leverages subthreshold operation and near-weak inversion…
The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy…
In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing…
Due to the increasing popularity of DC loads and the potential for higher efficiency, DC microgrids are gaining significant attention. DC microgrids utilize multiple parallel converters to deliver sufficient power to the load. However, a…
This paper describes a CMOS analogy voltage supper buffer designed to have extremely low static current Consumption as well as high current drive capability. A new technique is used to reduce the leakage power of class-AB CMOS buffer…
With the continuous improvement of on-chip integrated voltage regulators (IVRs) and fast, adaptive frequency control, dynamic voltage-frequency scaling (DVFS) transition times have shrunk from the microsecond to the nanosecond regime,…
Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protection against extracting the correct netlist. Threshold…
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on the standard threshold voltage (SVT) and low threshold…
Virtual oscillator control is the latest control technique for grid-forming inverters. Virtual Oscillator based Controllers (VOCs) provide all the steady-state droop functionalities of conventional droop controllers and, in addition, the…
The development of quantum circuits based on hybrid superconductor-semiconductor Josephson junctions holds promise for exploring their mesoscopic physics and for building novel superconducting devices. The gate-tunable superconducting…
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…
A control design for error reduction in the tracking control for a class of non-lower triangular nonlinear systems is presented by combining techniques of Variable Power Surface Error Function (VPSEF), backstepping, and dynamic surface…