Related papers: Analysis of the two dimensional Datta-Das Spin Fie…
We calculate the dynamical spin-structure factor of the $S=1$ Ising spin chain with negative single-ion anisotropy in magnetic fields using the infinite time-evolving-block-decimation algorithm. We show that when a transverse magnetic field…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
A transfer matrix technique is used to model phase coherent spin transport in the weakly disordered quasi one-dimensional channel of a gate-controlled electron spin interferometer [Datta and Das, Appl. Phys. Lett., 56, 665 (1990)]. It…
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within…
We report the theoretical investigation of noise spectrum of spin current and spin transfer torque for non-colinear spin polarized transport in a spin-valve device which consists of normal scattering region connected by two ferromagnetic…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…
We have carried out a systematic analysis of the transverse dipole spin response of a large size quantum dot within time-dependent current density functional theory. Results for magnetic fields corresponding to integer filling factors are…
The existence of conserved spin Hall currents is shown in a strongly correlated system without involving spin-orbit coupling. The spin Hall conductivity is determined by intrinsic bulk properties, which remains finite even when the charge…
The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B…
We suggest a generalization of nonlinear $\sigma$-model for diffusive superconducting systems to account for magnetoelectric effects due to spin-orbit scattering. In the leading orders of spin-orbit strength and gradient expansion it…
We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor…
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…
In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…
We study spin motive forces, i.e, spin-dependent forces, and voltages induced by time-dependent magnetization textures, for moving magnetic vortices and domain walls. First, we consider the voltage generated by a one-dimensional…
A recent experiment reports a non-local spin-signal that shows oscillatory behavior as a function of gate voltage when the contacts are magnetized along the direction of current flow, but not when they are magnetized perpendicular to the…