We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge-carrier in the quasi-two dimensional channel of a pentacene transistor by a factor of two from its bulk value when the gate is a high-permittivity dielectric such as (Ta2O5) while this reduction essentially vanishes using a polymer gate-insulator. These results demonstrate that carrier mass renormalization triggers the dielectric effects on the mobility reported recently in OFETs.
@article{arxiv.cond-mat/0510751,
title = {Polarization effects in the channel of an organic field-effect transistor},
author = {H. Houili and J. D. Picon and M. N. Bussac and L. Zuppiroli},
journal= {arXiv preprint arXiv:cond-mat/0510751},
year = {2009}
}