We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A negative gate voltage of -50V significantly decreases the activation energy (Ea) down to 0.143 eV near room temperature. Assuming thermal equilibrium between trapped and free carriers, from Ea = 0.143eV, we find the number of free carriers is only 0.4% of the total number of injected carriers. Along with effective mobility ~ 0.3 cm2/Vs this gives the intrinsic free carrier mobility of ~75 cm2/Vs.
@article{arxiv.cond-mat/0305402,
title = {Limit of Field Effect Mobility on Pentacene Single Crystal},
author = {V. Y. Butko and X. Chi and D. V. Lang and A. P. Ramirez},
journal= {arXiv preprint arXiv:cond-mat/0305402},
year = {2014}
}
Comments
9 pages, 3 figures. Sent to Applied Physics Letters