Related papers: Monolithic Pixel Sensors in Deep-Submicron SOI Tec…

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a…

In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron…

This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and…

Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems.…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

Semiconductor pixel detectors are widely established in High Energy Physics (HEP) and Medical physics for their high spatial resolution and tracking capabilities. Research on both monolithic detectors and hybrid detectors is ongoing.…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting…

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…

Point-like broadband ultrasound detection can significantly increase the resolution of ultrasonography and optoacoustic (photoacoustic) imaging, yet current ultrasound detectors cannot be miniaturised sufficiently. Piezoelectric transducers…

An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…

Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a…

We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as…

As silicon photonics transitions from research to commercial deployment, packaging solutions that efficiently couple light into highly-compact and functional sub-micron silicon waveguides are imperative but remain challenging. The 220 nm…

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable…

A prototype of the CMOS pixel sensor named SUPIX-1 has been fabricated and tested in order to investigate the feasibility of a pixelated tracker for a proposed Higgs factory, namely, the Circular Electron-Positron Collider (CEPC). The…

We present a method of embedding a Monolithic Active Pixel Sensor (MAPS) into a flexible printed circuit board (FPC) and its interconnection by means of through-hole copper plating. The resulting assembly, baptised "MAPS foil", is a…

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process,…

High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great…