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Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties,…

For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking…

Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small…

Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible…

Strained layer superlattice (SLS) material system is a dynamic and relatively new material for infrared detection. Large format, small-pitch and low-cost focal plane arrays (FPAs) with more pixels are in demand for different applications.…

Silicon sensors are the most diffuse position sensitive device in particle physics 8 experiments and in countless applications in science and technology. They had a spectacular progress in performance over almost 40 years since their first…

We are developing DAQ for Si-pixel detectors by using a Slicon-On-Insulator (SOI) technology. This DAQ consists of firmware works on SEABAS (Soi EvAluation BoArd with Sitcp) DAQ board and software works on PC. We have been working on the…

Advances in silicon (Si) photonics at submicrometer wavelengths are unlocking new opportunities to realize miniaturized, scalable optical systems for biophotonics, quantum information, imaging, spectroscopy, and displays. Addressing this…

We describe a sensor for the measurement of thin dielectric layers capable of operation in a variety of environments. The sensor is obtained by microfabricating a capacitor with interleaved aluminum fingers, exposed to the dielectric to be…

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…

The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 {\mu}m. In Topmetal-M, a novel…

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is…

Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single…

Employing amorphous superconductors, such as Type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and…

On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…

An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach…

We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…

Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range…

The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on…