The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 {\mu}m. In Topmetal-M, a novel charge collection method combing the Monolithic Active Pixel Sensor (MAPS) and the Topmetal sensor has been proposed for the first time. Both the ionized charge deposited by the particle in the sensor and along the track over the sensor can be collected. The in-pixel circuit mainly consists of a low-noise charge sensitive amplifier to establish the signal for the energy reconstruction, and a discriminator with a Time-to-Amplitude Converter (TAC) for the Time of Arrival (TOA) measurement. With this mechanism, the trajectory, particle hit position, energy and arrival time of the particle can be measured. The analog signal from each pixel is accessible through time-shared multiplexing over the entire pixel array. This paper will discuss the design and preliminary test results of the Topmetal-M sensor.
@article{arxiv.2201.10952,
title = {Topmetal-M: a novel pixel sensor for compact tracking applications},
author = {Weiping Ren and Wei Zhou and Bihui You and Ni Fang and Yan Wang and Haibo Yang and Honglin Zhang and Yao Wang and Jun Liu and Xianqin Li and Ping Yang and Le Xiao and YuezhaoZhang and Xiangru Qu and Shuguang Zou and GuangmingHuang and Hua Pei and Fan Shen and Dong Wang and Xiaoyang Niu and Yuan Mei and Yubo Han and ChaosongGao and Xiangming Sun and Chengxin Zhao},
journal= {arXiv preprint arXiv:2201.10952},
year = {2022}
}