Related papers: A Rad-hard CMOS Active Pixel Sensor for Electron M…
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…
The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…
Bent monolithic active pixel sensors are the basis for the planned fully cylindrical ultra low material budget tracking detector ITS3 of the ALICE experiment. This paper presents results from testbeam campaigns using high-energy particles…
Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the mapping of electric, magnetic and strain fields depend on the dose. Reasonable acquisition time requires high beam…
Results obtained with 3D columnar pixel sensors bump-bonded to the RD53A prototype readout chip are reported. The interconnected modules have been tested in a hadron beam before and after irradiation to a fluence of about…
We present a concept for an imaging gamma-ray polarimeter operating from ~50 MeV to ~1 GeV. Such an instrument would be valuable for the study of high-energy pulsars, active galactic nuclei, supernova remnants, and gamma-ray bursts. The…
Due to their radiation hardness, kilohertz frame rates, and high dynamic range, hybrid pixel detectors have recently expanded their application range to electron diffraction and recently also electron imaging. However, these detectors…
Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will…
Using industrial standard 0.35{\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud…
CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC…
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…
The Micro Vertex Detector (MVD) of the future Compressed Baryonic Matter (CBM) experiment at FAIR will have to provide a spatial precision of $\sim 5~\rm \mu m$ in combination with a material budget of 0.3\% - 0.5\% X$_0$ for a full…
In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices…
When a sample is exposed using electron-beam lithography, the electrons scatter deep and far in the substrate, resulting in unwanted deposition of dose at both the nano- and the microscale. This proximity effect can be mitigated by…
We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly…
This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been…
An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active…
We report on measurements of 1 and 1.5 MeV monoenergetic electrons with a Timepix3-based detector using a 0.5 mm thick silicon sensor. A $^{90}$Sr $\beta$-emitting radioisotope was used as the source of electrons, and a monochromator…
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…