Related papers: A Rad-hard CMOS Active Pixel Sensor for Electron M…

In this paper we present the testing of a back-illuminated development Euclid Visible Instrument (VIS) Charge-Coupled Device (CCD) to measure the intrinsic CCD Point Spread Function (PSF) characteristics using a novel modelling technique.…

We present the results of an experiment where a short focal length (~ 1.3 cm) permanent magnet electron lens is used to image micron-size features of a metal sample in a single shot, using an ultra- high brightness ps-long 4 MeV electron…

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…

In the planned or considered upgrades of LHCb, ALICE and Belle II experiments, the Ring imaging Cherenkov (RICH) detectors will have to be improved in order to function at increased beam interaction density. The photodetectors used in…

High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great…

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase…

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…

The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer…

To understand the scientific imaging capability, one must characterize the intra-pixel sensitivity variation (IPSV) of the CMOS image sensor. Extracting an IPSV map contributes to an improved detector calibration that allows to eliminate…

DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…

CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those…

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the…

This paper presents development and characterization of a 3.2 Gb/s serial link transmitter for CMOS image sensors. The transmitter incorporates Reed-Solomon code to achieve low error rate in the harsh environment of subatomic physics…

Interactions between atomic and molecular objects are to a large extent defined by the nanoscale electrostatic potentials which these objects produce. We introduce a scanning probe technique that enables three-dimensional imaging of local…

CMOS detectors offer many advantages over CCDs for optical and UV astronomical applications, especially in space where high radiation tolerance is required. However, astronomical instruments are most often designed for low light-level…

We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the…

We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

Detector developments are currently enabling new capabilities in the field of transmission electron microscopy (TEM). We have investigated the limits of a hybrid pixel detector, Medipix3, to record dynamic, time varying, electron signals.…

The Multi-Chip-Module-Deposited (MCM-D) technique has been used to build hybrid pixel detector assemblies. This paper summarises the results of an analysis of data obtained in a test beam campaign at CERN. Here, single chip hybrids made of…