Related papers: A Rad-hard CMOS Active Pixel Sensor for Electron M…
High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50$\mu m$ x 150$\mu m$, fabricated using TSI 180nm HV-CMOS technology, is a full reticle-size…
Transition-edge sensors (TESs) are capable of highly accurate single particle energy measurement. TESs have been used for a wide range of photon detection applications, particularly in astronomy, but very little consideration has been given…
A next-generation medium-energy gamma-ray telescope targeting the MeV range would address open questions in astrophysics regarding how extreme conditions accelerate cosmic-ray particles, produce relativistic jet outflows, and more. One…
The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link. Using data taken at the…
The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 {\mu}m. In Topmetal-M, a novel…
Transition-edge sensors (TESs) have the potential to perform electron spectroscopic measurements with far greater measurement rates and efficiencies than can be achieved using existing electron spectrometers. Existing spectrometers filter…
Metal-coated microsphere monolayers (MCM) are a class of plasmonic crystals consisting of noble metal films over arrays of self-assembled colloidal microspheres. Despite their ease of fabrication and tunable plasmonic response, their…
We report results on a tracking performance study performed using a beam telescope made of 50 micron-thick CMOS pixel sensors on the 1.5 GeV electron beam at the LBNL ALS.
A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 micron thick cadmium telluride (CdTe) sensor. The full…
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…
We acquired an image of the Siemens Star Chart using the ${}^{10}$B-INTPIX4 CMOS pixelated imager at J-PARC MLF BL21 (NOVA). The image blurriness, characterized by a root mean square (rms) value of 17 $\mu$m in the line spread function,…
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two…
An R&D program on monolithic CMOS pixel sensors for application at the ILC has been started at LBNL. This program profits of significant synergies with other R&D activities on CMOS pixel sensors. The project activities after the first…
Recently CMOS (complementary metal-oxide semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray…
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$…
MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without…