In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Phi=5.9x10^14 n/cm^2 a position resolution below 15 um can be achieved after calibration.
@article{arxiv.physics/0603192,
title = {Sensor Simulation and position calibration for the CMS pixel detector},
author = {V. Chiochia and E. Alagoz and M. Swartz},
journal= {arXiv preprint arXiv:physics/0603192},
year = {2008}
}
Comments
Presented at the 14th Int. Workshop on Vertex Detectors (Vertex 2005), November 7-11 2005, Chuzenji Lake, Nikko, Japan. 4 pages, 1 figure