Measurement and simulation of charge diffusion in a small-pixel charge-coupled device

Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will have a ratio of detector thickness to pixel size of six or more, roughly twice that of legacy imaging sensors. This implies greater diffusion of X-ray charge packets. We investigate consequences for sensor performance, reporting charge diffusion measurements in a fully-depleted, 50um thick, back-illuminated CCD with 8um pixels. We are able to measure the size distributions of charge packets produced by 5.9 keV and 1.25 keV X-rays in this device. We find that individual charge packets exhibit a gaussian spatial distribution, and determine the frequency distribution of event widths for a range of internal electric field strength levels. We find a standard deviation for the largest charge packets, which occur near the entrance window, of 3.9um. We show that the shape of the event width distribution provides a clear indicator of full depletion and infer the relationship between event width and interaction depth. We compare measured width distributions to simulations. We compare traditional, 'sum-above-threshold' algorithms for event amplitude determination to 2D gaussian fitting of events and find better spectroscopic performance with the former for 5.9 keV events and comparable results at 1.25 keV. The reasons for this difference are discussed. We point out the importance of read noise driven detection thresholds in spectral resolution, and note that the derived read noise requirements for mission concepts such as AXIS and Lynx may be too lax to meet spectral resolution requirements. While we report measurements made with a CCD, we note that they have implications for the performance of high aspect-ratio silicon active pixel sensors as well.