Related papers: A Rad-hard CMOS Active Pixel Sensor for Electron M…

Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their…

In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron…

The physics aims at the proposed future CLIC high-energy linear $e^+ e^-$ collider pose challenging demands on the performance of the detector system. In particular the vertex and tracking detectors have to combine precision measurements…

X-ray polarimetry in astronomy has not been exploited well, despite its importance. The recent innovation of instruments is changing this situation. We focus on a complementary MOS (CMOS) pixel detector with small pixel size and employ it…

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements…

Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography)…

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…

Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3…

The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex…

MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for…

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…

Silicon pixel detectors produced according to the ATLAS Pixel Detector design were tested in a beam at CERN in the framework of the ATLAS collaboration. The detectors used n+/n sensors with oxygenated silicon substrates. The experimental…

Increase in image resolution require the ability of image sensors to pack an increased number of circuit components in a given area. On the the other hand a high speed processing of signals from the sensors require the ability of pixel to…

We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm…

The precise reconstruction of Compton-scatter events is paramount for an imaging medium-energy gamma-ray telescope. The proposed AMEGO-X is enabled by a silicon tracker utilizing AstroPix chips - a pixelated silicon HVCMOS sensor novel for…

We demonstrated a CMOS imaging system that adapts each pixel's exposure and sampling rate to capture high dynamic range (HDR) videos. The system consist of a custom designed image sensor with pixel-wise exposure configurability and a…

An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…

Diamond has been developed as a material for the detection of charged particles by ionization. Its radiation hardness makes it an attractive material for detectors operated in a harsh radiation environment e.g. close to a particle beam as…

The advent of back-illuminated complementary metal-oxide-semiconductor (CMOS) sensors and their well-known advantages over charge-coupled devices (CCDs) make them an attractive technology for future X-ray missions. However, numerous…

In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial…