Related papers: Long spin coherence in silicon with an electrical …
There is growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of…
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…
Precision experiments, such as the search for electric dipole moments of charged particles using radiofrequency spin rotators in storage rings, demand for maintaining the exact spin resonance condition for several thousand seconds.…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
We report non-invasive detection of spin coherence in a collection of Raman-driven cold atoms using dispersive Faraday rotation fluctuation measurements, which opens up new possibilities of probing spin correlations in quantum gases and…
Precision measurements in storage rings are increasingly limited by the ability to monitor collective spin dynamics coherently over long time scales. Existing polarimetry techniques rely on destructive scattering processes that preclude…
Magnetic clock transitions (CTs), defined by vanishing first-order sensitivity of the transition frequency to magnetic field fluctuations, provide a powerful route to suppress decoherence in donor spin systems. Here, we present the…
Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of the ms = \pm1 sub-levels differ significantly from that of the ms =0…
We propose a method to optically detect the spin state of a 31-P nucleus embedded in a 28-Si matrix. The nuclear-electron hyperfine splitting of the 31-P neutral-donor ground state can be resolved via a direct frequency discrimination…
We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. As the signal from a…
We present experimental results and macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at…
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective,…
High degree of preservation of spin states during energy relaxation processes mediated by optical phonons is demonstrated in a single quantum dot. Optical-phonon resonance and relevant suppression of spin relaxation are clearly identified…
In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling,…
Qubits, the quantum mechanical bits required for quantum computing, must retain their fragile quantum states over long periods of time. In many types of electron spin qubits, the primary source of decoherence is the interaction between the…
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an…
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…
Electron spin resonance (ESR) is a useful tool to investigate properties of materials in magnetic fields where high spin polarization of target electron spins is required in order to obtain high sensitivity. However, the smaller magnetic…