Related papers: Long spin coherence in silicon with an electrical …
Carrier spins in semiconductor nanocrystals are promising candidates for quantum information processing. Using a combination of time-resolved Faraday rotation and photoluminescence spectroscopies, we demonstrate optical spin polarization…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
It has recently been suggested that two counter-propagating, circularly polarized, ultra-intense lasers can induce a strong electron spin polarization at the magnetic node of the electromagnetic field that they setup. We confirm these…
High-spin paramagnetic manganese defects in polar piezoelectric zinc oxide exhibit a simple almost axial anisotropy and phase coherence times of the order of a millisecond at low temperatures. The anisotropy energy is tunable using an…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of…
Encapsulated atomic hydrogen in cube-shaped octa-silsesquioxane (POSS) cages of the Si$_8$O$_{12}$R$_8$ type (where R is an organic group) is the simplest alternative stable system to paramagnetic endohedral fullerenes (N@C$_{60}$ or…
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…
Collective charge-density modes (plasmons) of the clean two-dimensional unpolarized electron gas are stable, for momentum conservation prevents them from decaying into single-particle excitations. Collective spin-density modes (spin…
The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment,…
Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times.…
Trapped ions are sensitive detectors of weak forces and electric fields that excite ion motion. Here measurements of the center-of-mass motion of a trapped-ion crystal that are phase-coherent with an applied weak external force are…
We have measured near normal incidence far infrared (FIR) reflectivity spectra of a single crystal of TbMnO3 from 10K to 300K in the spectral range of 50 cm$^{-1}$ to 700 cm$^{-1}$. Fifteen transverse optic (TO) and longitudinal optic (LO)…
We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically…
Entanglement is the quintessential quantum phenomenon and a necessary ingredient in most emerging quantum technologies, including quantum repeaters, quantum information processing (QIP) and the strongest forms of quantum cryptography. Spin…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long…
Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced…
We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental…
Using optical pulses of variable duration up to 80 ps, we report on spin coherence initialization and its subsequent detection in n-type singly-charged quantum dots, subject to a transverse magnetic field, by pump-probe techniques. We…