English

Millisecond spin-flip times of donor-bound electrons in GaAs

Mesoscale and Nanoscale Physics 2009-11-11 v1

Abstract

We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.

Keywords

Cite

@article{arxiv.cond-mat/0610524,
  title  = {Millisecond spin-flip times of donor-bound electrons in GaAs},
  author = {Kai-Mei C. Fu and Wenzheng Yeo and Susan Clark and Charles Santori and Colin Stanley and M. C. Holland and Yoshihisa Yamamoto},
  journal= {arXiv preprint arXiv:cond-mat/0610524},
  year   = {2009}
}

Comments

4 pages, 4 figures