Long-lived spin memory in Mn-doped GaAs: Time resolved study

I. A. Akimov; R. I. Dzhioev; V. L. Korenev; Yu. G. Kusrayev; E. A. Zhukov; D. R. Yakovlev; M. Bayer

Long-lived spin memory in Mn-doped GaAs: Time resolved study

Materials Science 2009-07-17 v1 Other Condensed Matter

Authors: I. A. Akimov , R. I. Dzhioev , V. L. Korenev , Yu. G. Kusrayev , E. A. Zhukov , D. R. Yakovlev , M. Bayer

Abstract

We study the electron spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.

Keywords

spin relaxation

Cite

@article{arxiv.0907.2851,
  title  = {Long-lived spin memory in Mn-doped GaAs: Time resolved study},
  author = {I. A. Akimov and R. I. Dzhioev and V. L. Korenev and Yu. G. Kusrayev and E. A. Zhukov and D. R. Yakovlev and M. Bayer},
  journal= {arXiv preprint arXiv:0907.2851},
  year   = {2009}
}

Comments

5 pages, 3 figures

Long-lived spin memory in Mn-doped GaAs: Time resolved study

Abstract

Keywords

Cite

Comments

Related papers