Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.
@article{arxiv.cond-mat/0508601,
title = {Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs},
author = {H. C. Schneider and J. -P. Wuestenberg and O. Andreyev and K. Hiebbner and L. Guo and J. Lange and L. Schreiber and B. Beschoten and M. Bauer and M. Aeschlimann},
journal= {arXiv preprint arXiv:cond-mat/0508601},
year = {2017}
}