We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing the lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} - 10^{16} cm^{-3}, for different values of the amplitude of the static electric field (0.1 - 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, more evident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spin depolarization length shows a nonmonotonic behaviour with the density. At the room temperature, the spin lifetimes and depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.
@article{arxiv.1008.4228,
title = {Doping dependence of spin dynamics of drifting electrons in GaAs bulks},
author = {Stefano Spezia and Dominique Persano Adorno and Nicola Pizzolato and Bernardo Spagnolo},
journal= {arXiv preprint arXiv:1008.4228},
year = {2012}
}