English

Density dependence of spin relaxation in GaAs quantum well at room temperature

Materials Science 2008-10-02 v2 Other Condensed Matter

Abstract

Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time first increases with density in the relatively low density regime where the linear D'yakonov-Perel' spin-orbit coupling terms are dominant, and then tends to decrease when the density is large and the cubic D'yakonov-Perel' spin-orbit coupling terms become important. These features are in good agreement with theoritical predictions by L\"u {\em et al.} [Phys. Rev. B {\bf 73}, 125314 (2006)]. A fully microscopic calculation based on numerically solving the kinetic spin Bloch equations with both the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms included, reproduces the density dependence of spin relaxation very well.

Keywords

Cite

@article{arxiv.0806.2577,
  title  = {Density dependence of spin relaxation in GaAs quantum well at room temperature},
  author = {L. H. Teng and P. Zhang and T. S. Lai and M. W. Wu},
  journal= {arXiv preprint arXiv:0806.2577},
  year   = {2008}
}

Comments

4 pages, 2 figures, Europhys. Lett., in press