English

Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well

Mesoscale and Nanoscale Physics 2015-05-20 v1

Abstract

Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically-designed GaAs quantum well comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on spin relaxation. D'yakonov-Perel' (DP) mechanism has been revealed to be the dominant contribution for spin relaxation in GaAs/AlGaAs QWs. The spin relaxation time exhibits non-monotonic dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron Coulomb scattering. Our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin Bloch equation approach.

Keywords

Cite

@article{arxiv.1010.6144,
  title  = {Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well},
  author = {L. F. Han and Y. G. Zhu and X. H. Zhang and P. H. Tan and H. Q. Ni and Z. C. Niu},
  journal= {arXiv preprint arXiv:1010.6144},
  year   = {2015}
}

Comments

17 pages, 4 figures