Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of voltage-gateable spin-memory time longer than 3 ns simultaneously with high electron mobility.
@article{arxiv.cond-mat/0305396,
title = {High temperature gate control of quantum well spin memory},
author = {O. Z. Karimov and G. H. John and R. T. Harley and W. H. Lau and M. E. Flatte and M. Henini and R. Airey},
journal= {arXiv preprint arXiv:cond-mat/0305396},
year = {2009}
}