Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells
Mesoscale and Nanoscale Physics
2015-06-25 v1 Disordered Systems and Neural Networks
Abstract
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.
Keywords
Cite
@article{arxiv.cond-mat/0601252,
title = {Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells},
author = {N. S. Averkiev and L. E. Golub and A. S. Gurevich and V. P. Evtikhiev and V. P. Kochereshko and A. V. Platonov and A. S. Shkolnik and Yu. P. Efimov},
journal= {arXiv preprint arXiv:cond-mat/0601252},
year = {2015}
}
Comments
4 pages, 3 figures