Spin relaxation in sub-monolayer and monolayer InAs structures grown in GaAs matrix
Abstract
Electron spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/31 monolayer) embeded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin relaxation time of the sub-monolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. We attributed the slowing of the spin relaxation to dimensionally constrained D\textquoteright{}yakonov-Perel\textquoteright{} mechanism in the motional narrowing regime. The electron spin relaxation time and the effective g-factor in sub-monolayer samples were found to be strongly dependent on the photon-generated carrier density. The contribution from both D\textquoteright{}yakonov-Perel\textquoteright{} mechanism and Bir-Aronov-Pikus mechanism were discussed to interpret the temperature dependence of spin decoherence at various carrier densities.
Cite
@article{arxiv.0902.0484,
title = {Spin relaxation in sub-monolayer and monolayer InAs structures grown in GaAs matrix},
author = {Chunlei Yang and Xiaodong Cui and Shun-Qing Shen and Zhongying Xu and Weikun Ge},
journal= {arXiv preprint arXiv:0902.0484},
year = {2015}
}
Comments
5 pages, 4 figures