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Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time…

Materials Science · Physics 2008-10-02 L. H. Teng , P. Zhang , T. S. Lai , M. W. Wu

The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron…

Mesoscale and Nanoscale Physics · Physics 2018-08-15 S. Ullah , G. M. Gusev , A. K. Bakarov , F. G. G. Hernandez

Electron spin relaxation caused by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical A$_3$B$_5$ heterostructures. The total spin relaxation anisotropy is demonstrated for a wide range of structure parameters and…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 N. S. Averkiev , L. E. Golub , M. Willander

Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much…

Mesoscale and Nanoscale Physics · Physics 2015-05-20 L. F. Han , Y. G. Zhu , X. H. Zhang , P. H. Tan , H. Q. Ni , Z. C. Niu

Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular…

Mesoscale and Nanoscale Physics · Physics 2014-03-28 L. Wang , M. W. Wu

We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…

We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using…

We comment on the conclusion by Teng et al. [J. Phys. D: Appl. Phys. {\bf 42}, 135111 (2009)] that the Bir-Aronov-Pikus mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk GaAs. We point…

Mesoscale and Nanoscale Physics · Physics 2009-11-09 J. H. Jiang , M. W. Wu

The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…

Materials Science · Physics 2012-09-19 H. Tong , X. Marie , M. W. Wu

We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…

Materials Science · Physics 2016-10-19 Gionni Marchetti , Matthew Hodgson , James McHugh , Roy Chantrell , Irene D'Amico

We investigate electron spin dynamics in narrow two-dimensional n-InGaAs channels as a function of the channel width. The spin relaxation times increase with decreasing channel width, in accordance with recent theoretical predictions based…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. W. Holleitner , V. Sih , R. C. Myers , A. C. Gossard , D. D. Awschalom

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…

Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…

Materials Science · Physics 2009-11-07 Pil Hun Song , K. W. Kim

We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and…

Materials Science · Physics 2007-05-23 J. Zhou , J. L. Cheng , M. W. Wu

The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…

Statistical Mechanics · Physics 2011-12-20 Stefano Spezia , Dominique Persano Adorno , Nicola Pizzolato , Bernardo Spagnolo

We calculate the spin relaxation time of mobile electrons due to spin precession between random impurity scattering (D'yakonov-Perel' mechanism) in electrically gated bilayer graphene analytically and numerically. Due to the trigonal…

Mesoscale and Nanoscale Physics · Physics 2012-09-11 Mathias Diez , Guido Burkard

We report on the measurements of spin relaxation in GaAs quasi-one-dimensional mesowires, relying on spin noise spectroscopy, thus adding to the existing body of spin relaxation studies in bulk, two-dimensional and zero dimensional systems.…

Mesoscale and Nanoscale Physics · Physics 2021-11-18 Stefania Castelletto , ChanJu You , Deborah L. Gater , A. F. Isakovic

We investigate spin transport in InSb/InAlSb heterostructure using the Monte Carlo approach, generalized by including density matrix description of spin for taking spin dynamics into account. In addition to the dominant Dyakonov-Perel (DP)…

Mesoscale and Nanoscale Physics · Physics 2015-05-19 Akashdeep Kamra , Bahniman Ghosh , Tarun K. Ghosh

The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 M. M. Glazov , E. L. Ivchenko , M. A. Brand , O. Z. Karimov , R. T. Harley

We study the electron spin relaxation in intrinsic and $p$-type (001) GaAs quantum wells by constructing and numerically solving the kinetic spin Bloch equations. All the relevant scatterings are explicitly included, especially the…

Materials Science · Physics 2008-02-21 J. Zhou , M. W. Wu
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