Related papers: Spin relaxation in sub-monolayer and monolayer InA…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS$_2$. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond-timescale Larmor spin…
We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic…
We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven…
We investigate electron spin relaxation in $p$-type GaAs quantum wells from a fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings, such as the electron-impurity, electron-phonon, electron-electron…
Spintronic devices usually rely on long spin relaxation times and/or lengths for optimum performance. Therefore, the ability to modulate these quantities with an external agent offers unique possibilities. The dominant spin relaxation…
Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position,…
We study the spin-relaxation time in materials where a large spin-orbit coupling (SOC) is present which breaks the spatial inversion symmetry. Such a spin-orbit coupling is realized in zincblende structures and heterostructures with a…
We report theoretical and experimental studies of ambipolar spin diffusion in a semiconductor. A circularly polarized laser pulse is used to excite spin-polarized carriers in a GaAs multiple quantum well sample at 80 K. Diffusion of…
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in…
The D'yakonov-Perel' (DP) spin-relaxation mechanism has traditionally been associated with either relativistic spin-orbit coupling, which breaks space-inversion symmetry, or inhomogeneous magnetization, which breaks both time-reversal and…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $\tau_s$ scales inversely with the mobility $\mu$…
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…
We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of…
The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show…
In this work, the spin relaxation accompanying the spin diffusion in symmetric Si/SiGe quantum wells without the D'yakonov-Perel' spin-relaxation mechanism is calculated from a fully microscopic approach. The spin relaxation is caused by…
A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is…
Recently K. Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in $n$-doped GaAs in the regime close to the metal-insulator transition. We…
The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the…