Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature

S. G. Carter; Ö. O. Soykal; Pratibha Dev; Sophia E. Economou; E. R. Glaser

doi:10.1103/PhysRevB.92.161202

Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature

Mesoscale and Nanoscale Physics 2015-10-19 v1 Quantum Physics

Authors: S. G. Carter , Ö. O. Soykal , Pratibha Dev , Sophia E. Economou , E. R. Glaser

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Abstract

The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an ensemble of vacancies and find the properties depend strongly on magnetic field. The spin echo decay time varies from less than 10 $\mu$ s at low fields to 80 $\mu$ s at 68 mT, and a strong field-dependent spin echo modulation is also observed. The modulation is attributed to the interaction with nuclear spins and is well-described by a theoretical model.

Keywords

silicon vacancy 4H-SiC spin coherence spin echo modulation optically detected magnetic resonance magnetic field dependence nuclear spin interaction

Cite

@article{arxiv.1506.05641,
  title  = {Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature},
  author = {S. G. Carter and Ö. O. Soykal and Pratibha Dev and Sophia E. Economou and E. R. Glaser},
  journal= {arXiv preprint arXiv:1506.05641},
  year   = {2015}
}

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17 pages including supplemental material, 4 figures in the main text, and 2 figures in the supplemental material

Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature

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