Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the electron spin coherence time, T2, and the spin-lattice relaxation time, T1, were measured to be 7.5 ls and ~1 ms, respectively, at 5 K. The spin echo decay profile displayed strong modulation, which was consistent with the super-hyperfine interaction between Er3{\th} and a spin bath of 29Si nuclei. The calculated spectral diffusion time was similar to the measured T2, which indicated that T2 was limited by spectral diffusion due to T1-induced flips of neighboring Er3{\th} spins. The origin of the echo is an Er center surrounded by six O atoms with monoclinic C1h site symmetry.
@article{arxiv.2110.06102,
title = {Spin echo from erbium implanted silicon},
author = {Mark A. Hughes and Naitik A. Panjwani and Matias Urdampilleta and Kevin P. Homewood and Ben Murdin and J. David Carey},
journal= {arXiv preprint arXiv:2110.06102},
year = {2024}
}
Comments
arXiv admin note: substantial text overlap with arXiv:2006.00225