We demonstrate an efficient control of 29Si nuclear spin orientation for specific lattice sites near 31P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of narrow holes and peaks in the ESR lines of 31P. The pattern originates from dynamic polarization the 29Si nuclear spins near the donors via the solid effect. This method can be used for initialization of qubits based on 29Si nuclear spins in the all-silicon quantum computer. In comparison, polarization of 29Si performed by pumping the allowed ESR transitions, did not create any patterns. Instead, a single narrow spectral hole was burnt in the ESR line. The difference is explained by a rapid spin diffusion during the microwave pumping of the allowed transitions.
@article{arxiv.1409.6462,
title = {Microscopic control of $^{29}$Si nuclear spins near phosphorus donors in silicon},
author = {J. Järvinen and D. Zvezdov and J. Ahokas and S. Sheludyakov and O. Vainio and L. Lehtonen and S. Vasiliev and Y. Fujii and S. Mitsudo and T. Mizusaki and M. Gwak and SangGap Lee and Soonchil Lee and L. Vlasenko},
journal= {arXiv preprint arXiv:1409.6462},
year = {2015}
}