Related papers: High Density Through Silicon Via (TSV)
This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged…
We investigate the impact of two-level systems (TLSs) on superconductivity, treating them as soft modes localised in real space. We show that these defects can either enhance or suppress the superconducting critical temperature, depending…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
CMOS Image Sensors are experiencing significant growth due to their capabilities to be integrated in smartphones with refined image quality. One of the major contributions to the growth of image sensors is the innovation brought about in…
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per…
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase…
We adopt thick-film technology to produce ultra high vacuum compatible interfaces for electrical signals. These interfaces permit voltages of hundreds of Volts and currents of several Amperes and allow for very compact vacuum setups, useful…
Cooling high-power electronics in multilayer integrated circuits (ICs) is challenging for existing cooling methods. In this work, we designed through-chip microchannels (TCMCs) that cross the entire chip perpendicularly to the layers, with…
Aluminium based platforms have allowed to reach major milestones for superconducting quantum circuits. For the next generation of devices, materials that are able to maintain low microwave losses while providing new functionalities, such as…
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield is a crucial step for device integration. In this work, we…
A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the…
A spectroscopic imaging-scanning tunneling microscope (SI-STM) allows the atomic scale visualization of surface electronic and magnetic structure of novel quantum materials with high energy resolution. To achieve the optimal performance,…
Silicon photonics technology enables compact, low-power and cost-effective optical microsystems on a chip by leveraging the materials and advanced fabrication methods developed over decades for integrated silicon electronics. Silicon…
Vanadium silicide, V$_3$Si, is a promising superconductor for silicon-based superconducting (SC) devices due to its compatibility with silicon substrates and its potential for integration into existing semiconductor technologies. However,…
First principles molecular dynamics simulations reveal a liquid-liquid phase transition in supercooled elemental silicon. Two phases coexist below $T_c\approx 1232K$. The low density phase is nearly tetra-coordinated, with a pseudogap at…
A simplified theoretical model for the constant-magnitude steady-state surface photovoltage (SPV) technique is developed. Emphasis is placed on the determination of the minority carrier diffusion length L in the particular case for which…
Non-linear absorption phenomena induced by controlled irradiation with a femtosecond laser beam can be used to tailor materials properties within the bulk of substrates. One of the most successful applications of this technique is the…
Heterogeneous manycore architectures are the key to efficiently execute compute- and data-intensive applications. Through silicon via (TSV)-based 3D manycore system is a promising solution in this direction as it enables integration of…
In chip-to-chip communication, terahertz waves provide a promising approach to achieve high data capacity with improved energy efficiency, effectively bridging the gap between electrical and optical domains. By realizing this potential,…
We report results of high-resolution TOF SIMS (time of flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic…