Related papers: Electron transport in a slot-gate Si MOSFET
We propose a phenomenological model that describes counterflow and drag experiments with quantum Hall bilayers in a \nu_T=1 state. We consider the system consisting of statistically distributed areas with local total filling factors…
In the framework of the edge-channel picture and the scattering approach to conduction, we discuss the low frequency admittance of quantized Hall samples up to second order in frequency. The first-order term gives the leading order…
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…
We present the first detailed study of the effect of a strong magnetic field on single-electron pumping in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pumping from Landau…
Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field intensity in different direction. This result is different with…
We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…
Experimental studies of the transitions from a primary quantum Hall (QH) liquid at filling factor 1/k (with k an odd integer) to the insulator have indicated a ``quantized Hall insulator'' (QHI) behavior: while the longitudinal resistivity…
We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…
We have analyzed the effects of the anisotropic energy bands of phosphorene on magnetoroton branches for electrons and holes in the two Landau levels close to the band edges. We have found that the fractional quantum Hall effect gap in the…
The recent discovery of the 3D quantum Hall effect in $\mathrm{HfTe_5}$ has also revealed puzzling signatures of possible 3D fractionalization. Beyond the first plateau associated with the lowest Landau band, Hall conductivity exhibits a…
For a two dimensional electron system in a strong perpendicular magnetic field B, there are extended states at each Landau level. We show that if the inverse compressibility is negative, then the extended states float downward in energy…
Gate-voltage control of inter-edge tunneling at a split-gate constriction in the fractional quantum Hall regime is reported. Quantitative agreement with the behavior predicted for out-of-equilibrium quasiparticle transport between chiral…
We investigated some influences of unconventional physics, such Lorentz-symmetry violation, for quantum mechanical systems. In this context, we calculated a important contribution for Standard Model Extension. In the non-relativistic limit,…
We study the hitherto un-addressed phenomenon of Quantum Hall Effect with a magnetic and electric fields oscillating in time with resonant frequencies. This phenomenon realizes an example of heterodyne device with the magnetic field acting…
In the strong magnetic field fractional quantum Hall regime, electrons in a two-dimensional electron system are confined to their lowest Landau level. Because of the macroscopic Landau level degeneracy nearly all physical properties at low…
The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
Microscopic processes giving the energy gain and loss of a two-dimensional electron system in long-range potential fluctuations are studied theoretically at the breakdown of the quantum Hall effect in the case of even-integer filling…
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence…
The magnetoelectronic coupling can be defined as cross-domain coupling between electronic and magnetic properties, where modulation in magnetic properties changes the electronic properties. In this letter, an explicit experimental evidence…