Dynamic Conductance in Quantum Hall Systems
Abstract
In the framework of the edge-channel picture and the scattering approach to conduction, we discuss the low frequency admittance of quantized Hall samples up to second order in frequency. The first-order term gives the leading order phase-shift between current and voltage and is associated with the displacement current. It is determined by the emittance which is a capacitance in a capacitive arrangement of edge channels but which is inductive-like if edge channels predominate which transmit charge between different reservoirs. The second-order term is associated with the charge relaxation. We apply our results to a Corbino disc and to two- and four-terminal quantum Hall bars, and we discuss the symmetry properties of the current response. In particular, we calculate the longitudinal resistance and the Hall resistance as a function of frequency.
Cite
@article{arxiv.cond-mat/9607051,
title = {Dynamic Conductance in Quantum Hall Systems},
author = {M. Buttiker and T. Christen},
journal= {arXiv preprint arXiv:cond-mat/9607051},
year = {2007}
}
Comments
11 pages, 2 figs. included; Contribution to the conference `The application of high magnetic fields in semiconductor physics', Wuerzburg, 28 July - 2 August. '96