Related papers: Electron transport in a slot-gate Si MOSFET
We study a new system in which electrons in two dimensions are confined by a non homogeneous magnetic field. The system consists of a heterostructure with on top of it a superconducting disk. We show that in this system electrons can be…
Quantum energy teleportation (QET) is a proposed protocol related to the quantum vacuum. The edge channels in a quantum Hall system is well suited for the experimental verification of QET. For this purpose, we examine a charge density wave…
The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the…
The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic field induced spin-splitting, which changes the density of states, the Fermi momentum and the screening…
We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges…
The presence of edge channels in the quantum Hall regime leads to dissipationless charge transport over long distances. When graphene is interfaced with a magnetic material, the exchange interaction lifts the Landau levels spin degeneracy.…
A two-dimensional harmonic oscillator, when rotated by the oscillator frequency, generates Landau-like levels. A further cranking results in condensates and gaps resembling the fractional quantum Hall effect. For a filling fraction…
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a…
Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found…
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly,…
We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity…
We have introduced a controllable nano-scale incursion into a potential barrier imposed across a two-dimensional electron gas, and report on the phenomena that we observe as the incursion develops. In the quantum Hall regime, the…
In this work we obtain the Landau levels and the Hall conductivity at zero temperature of a two-dimensional electron gas on a conical surface. We investigate the integer quantum Hall effect considering two different approaches. The first…
Optical Hall conductivity $\sigma_{xy}(\omega)$ is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz frequency regime. The Faraday rotation angle ($\sim$ fine structure constant $\sim$…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is…
By designing a multi-channel millimeter Hall measurement configuration, we realize the carrier-density (locally) controllable measurement on the transport property in 2H MoS$_{2}$. We observe a linearly increased Hall conductivity and…