Related papers: Electron transport in a slot-gate Si MOSFET
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
The electron-electron scattering increases the resistance of ballistic many-mode channels whose width is smaller than their length. We show that this increase saturates in the limit of infinitely long channels. Because the mechanisms of…
Quantum antidot, a small potential hill introduced into a two-dimensional electron system, presents an attractive tool to study quantum mechanics of interacting electrons.Here, we report experiments on electron resonant tunneling via a…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…
Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film…
Our microscopic understanding of the integer quantum Hall effect is still incomplete. For decades, there has been a controversial discussion about "where the current flows" if the Hall resistance is quantized. Here, we qualitatively analyze…
Most functionalities of modern electronic circuits rely on the possibility to modify the path fol- lowed by the electrons using, e.g. field effect transistors. Here we discuss the interplay between the modification of this path and the…
The effect of a DC electric field on the longitudinal resistance of highly mobile two dimensional electrons in heavily doped GaAs quantum wells is studied at different magnetic fields and temperatures. Strong suppression of the resistance…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes…
At total Landau level filling factor $\nu_{tot}=1$ a double layer two-dimensional electron system with small interlayer separation supports a collective state possessing spontaneous interlayer phase coherence. This state exhibits the…
A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a…
We investigate quantum transport in graphene/InSe heterostructures and find major asymmetries in the longitudinal resistance ($R_{xx}$) and vanishing $R_{xx}$ peaks at high magnetic fields, particularly at the charge-neutrality point. Our…
We consider free electrons in rectangular quantum dots, with either hard wall boundary conditions or anharmonic confinement. In both cases, due to finite size effects, a homogeneous electric field applied along one of the rectangular axis…
We develop a theory of edge state transport in separately contacted double-layer quantum Hall systems which are tuned close to the resonance condition for tunneling between the layers. When applied to the case where contact is made to only…
We have studied magnetotransport of a degenerate two-dimensional electron gas in a Hall sample in the Knudsen regime, when the mean free paths of electrons with respect to their collisions with each other and with impurities are much larger…
Short-range electron-electron interactions are incorporated into the network model of the integer quantum Hall effect. In the presence of interactions, the electrons, propagating along one link, experience exchange scattering off the…
Electron-electron interactions in half-filled high Landau levels in two-dimensional electron gases in a strong perpendicular magnetic field can lead to states with anisotropic longitudinal resistance. This longitudinal resitance is…
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states where the spin of the charge carriers is locked to their direction of motion. In order to probe the properties of the edge modes, we propose a…