Frequency doubling and memory effects in the Spin Hall Effect
Mesoscale and Nanoscale Physics
2009-11-21 v1
Abstract
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.
Cite
@article{arxiv.0812.4325,
title = {Frequency doubling and memory effects in the Spin Hall Effect},
author = {Yu. V. Pershin and M. Di Ventra},
journal= {arXiv preprint arXiv:0812.4325},
year = {2009}
}