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The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor…
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large…
The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and In$_x$Ga$_{1-x}$As quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated…
We theoretically investigate electrical transport in a quantum Hall system hosting bulk and edge current carrying states. Spatially varying magnetic and electric confinement creates pairs of current carrying lines that drift in the same or…
A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these…
In this work we investigate an unusual transport phenomenon observed in two-dimensional electron gas under integer quantum Hall effect conditions. Our calculations are based on the screening theory, using a semi-analytical model. The…
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling barrier exhibits a complex Landau level dispersion. Magnetotunneling spectroscopy is employed to investigate the small energy gaps which…
Using a sample with a split back-gate, a linear frequency dependence of the ac quantum Hall resistance was observed. The frequency coefficient, which is due to dielectric losses produced by leakage current between the 2DEG and the…
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external…
The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and…
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes…
Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…
The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can…
We show through both theoretical arguments and numerical calculations that graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields (B) and strain. The latter produces time-reversal…
In quantum Hall systems with two narrow constrictions, tunneling between opposite edges can give rise to quantum interference and Aharonov-Bohm-like oscillations of the conductance. When there is an integer quantized Hall state within the…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…