English

Fractional Quantum Hall Effect at High Fillings in a Two-subband Electron System

Mesoscale and Nanoscale Physics 2015-05-18 v2

Abstract

Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2\nu > 2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν\nu = 5/2 and 7/2 fillings; instead the observed states are at ν=(i+p/(2p±1))\nu = (i + p/(2p \pm 1)) where ii = 2, 3, and pp = 1, 2, 3, and include several new states at ν\nu = 13/5, 17/5, 18/5, and 25/7.

Keywords

Cite

@article{arxiv.1004.0979,
  title  = {Fractional Quantum Hall Effect at High Fillings in a Two-subband Electron System},
  author = {J. Shabani and Y. Liu and M. Shayegan},
  journal= {arXiv preprint arXiv:1004.0979},
  year   = {2015}
}
R2 v1 2026-06-21T15:07:19.314Z