The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here we report the observation of fractional quantum Hall effect in a very low disorder InAs quantum well with a well-width of 24 nm, containing a two-dimensional electron system with a density n=7.8×1011 cm−2 and low-temperature mobility 1.8×106 cm2/Vs. At a temperature of ≃35 mK and B≃24 T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at Landau level filling factor ν=4/3.
@article{arxiv.1712.01220,
title = {Observation of fractional quantum Hall effect in an InAs quantum well},
author = {Meng K. Ma and Md. Shafayat Hossain and K. A. Villegas Rosales and H. Deng and T. Tschirky and W. Wegscheider and M. Shayegan},
journal= {arXiv preprint arXiv:1712.01220},
year = {2017}
}