Fractional quantum Hall effect in CdTe

B. A. Piot; J. Kunc; M. Potemski; D. K. Maude; C. Betthausen; A. Vogl; D. Weiss; G. Karczewski; T. Wojtowicz

doi:10.1103/PhysRevB.82.081307

Fractional quantum Hall effect in CdTe

Mesoscale and Nanoscale Physics 2010-08-16 v1

Authors: B. A. Piot , J. Kunc , M. Potemski , D. K. Maude , C. Betthausen , A. Vogl , D. Weiss , G. Karczewski , T. Wojtowicz

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.

Keywords

fractional quantum hall effect quantum hall effect composite fermions in quantum hall effect

Cite

@article{arxiv.1006.0908,
  title  = {Fractional quantum Hall effect in CdTe},
  author = {B. A. Piot and J. Kunc and M. Potemski and D. K. Maude and C. Betthausen and A. Vogl and D. Weiss and G. Karczewski and T. Wojtowicz},
  journal= {arXiv preprint arXiv:1006.0908},
  year   = {2010}
}

Comments

Submitted

Fractional quantum Hall effect in CdTe

Abstract

Keywords

Cite

Comments

Related papers