We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers p = 1, 2, 3, and 4. Minima with p = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors ν = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions.
@article{arxiv.1806.01795,
title = {Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields},
author = {V. T. Dolgopolov and M. Yu. Melnikov and A. A. Shashkin and S. -H. Huang and C. W. Liu and S. V. Kravchenko},
journal= {arXiv preprint arXiv:1806.01795},
year = {2018}
}