We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e^2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at nu = 3/8 and 5/13.
@article{arxiv.1412.7451,
title = {Fractional Quantum Hall Effect at Landau Level Filling nu=4/11},
author = {W. Pan and K. W. Baldwin and K. W. West and L. N. Pfeiffer and D. C. Tsui},
journal= {arXiv preprint arXiv:1412.7451},
year = {2015}
}