Related papers: Fractional Quantum Hall Effect at Landau Level Fil…
We have studied the magnetotransport near Landau level filling factor $\nu = 1/2$ in a GaAs-Al0.3Ga0.7As square quantum well (width 35 nm) in magnetic field up to 42 T and in a temperature range between 50 mK and 1.5 K. In low temperatures…
We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor $\nu$=5/2 in a very high mobility specimen of $\mu=1.7 \times 10^7$ cm$^2$/Vs. We achieve an electron…
In the framework of a recently developed model of interacting composite fermions, we calculate the energy of different solid and Laughlin-type liquid phases of spin-polarized composite fermions. The liquid phases have a lower energy than…
We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and…
The reduction of the energy gap due to Landau level mixing, characterized by the dimensionless parameter $\lambda = (e^2/\epsilon l_0)/\hbar\omega_c$, has been calculated by variational Monte Carlo for the fractional quantum Hall effect at…
It has been well-known that topological phenomena with fractional excitations, i.e., the fractional quantum Hall effect (FQHE) \cite{Tsui1982} will emerge when electrons move in Landau levels. In this letter, we report the discovery of the…
Exact diagonalization of a two-dimensional electron gas in a strong magnetic field in the disk geometry shows that there exists a filling factor range in the second Landau level where the states significantly differ from those in the lowest…
We report on our theoretical investigations that point to the possibility of a fractional quantum Hall effect with partial spin polarization at $\nu=3/8$. The physics of the incompressible state proposed here involves p-wave pairing of…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
We consider both disorder and interaction effects on the magnetoresistance and Hall constant of composite fermions in the vicinity of half filled Landau level. By contrast to the standard case of Coulomb interacting two-dimensional electron…
The sequence of prominent fractional quantum Hall states up to $\nu$=5/11 around $\nu$=1/2 in a high mobility two-dimensional electron system confined at oxide heterointerface (ZnO) is analyzed in terms of the composite fermion model. The…
It is demonstrated that all observed fractions at moderate Landau level fillings for the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…
Reports of weak local minima in the magnetoresistance at $\nu=2+3/5$, $2+3/7$, $2+4/9$, $2+5/9$, $2+5/7$, and $2+5/8$ in the second Landau level of the electron gas in GaAs/AlGaAs left open the possibility of fractional quantum Hall states…
Motivated by two independent experiments revealing a resistance minimum at the Landau level (LL) filling factor $\nu=2+4/9$, characteristic of the fractional quantum Hall effect (FQHE) and suggesting electron condensation into a yet unknown…
It is demonstrated that all observed fractions at moderate Landau level fillings for the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…
At low Landau level filling of a two-dimensional electron system, typically associated with the formation of an electron crystal, we observe local minima in Rxx at filling factors nu=2/11, 3/17, 3/19, 2/13, 1/7, 2/15, 2/17, and 1/9. Each of…
It is demonstrated that all observed fractions at moderate Landau level fillings in the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…
Excitation modes in the range $2/5 \geq \nu \geq 1/3$ of the fractional quantum Hall regime are observed by resonant inelastic light scattering. Spectra of spin reversed excitations suggest a structure of lowest spin-split Landau levels of…
We present activation gap measurements of the fractional quantum Hall effect (FQHE) in the second Landau level. Signatures for 14 (5) distinct incompressible FQHE states are seen in a high (low) mobility sample with the enigmatic 5/2 even…
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for…