We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of m∗≈ 0.022me, which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound. The effective g-factor was determined to be g∗≈ 21.9. These results are also corroborated by k⋅p band structure calculations. When spin polarizing the electrons in a tilted magnetic field, the g-factor is significantly enhanced by electron-electron interactions, reaching a value as large as g∗ = 60 at a spin polarization P = 0.75. Finally, we show that due to the low effective mass the quantum Hall effect in our particular sample can be observed up to a temperature of 60 K and we propose scenarios how to increase this temperature even further.
@article{arxiv.2312.09704,
title = {Quantum Hall effect in InAsSb quantum wells at elevated temperatures},
author = {M. E. Bal and E. Cheah and Z. Lei and R. Schott and C. A. Lehner and H. Engelkamp and W. Wegscheider and U. Zeitler},
journal= {arXiv preprint arXiv:2312.09704},
year = {2023}
}