Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Zijin Lei; Erik Cheah; Filip Krizek; Rüdiger Schott; Thomas Bähler; Peter Märki; Werner Wegscheider; Mansour Shayegan; Thomas Ihn; Klaus Ensslin

doi:10.1103/PhysRevResearch.5.013117

Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Mesoscale and Nanoscale Physics 2023-02-21 v1 Materials Science

Authors: Zijin Lei , Erik Cheah , Filip Krizek , Rüdiger Schott , Thomas Bähler , Peter Märki , Werner Wegscheider , Mansour Shayegan , Thomas Ihn , Klaus Ensslin

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Abstract

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

Keywords

insb quantum well two-dimensional hole system two-dimensional electron system spin-orbit interaction weak anti-localization shubnikov-de haas oscillations spin susceptibility

Cite

@article{arxiv.2208.10427,
  title  = {Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well},
  author = {Zijin Lei and Erik Cheah and Filip Krizek and Rüdiger Schott and Thomas Bähler and Peter Märki and Werner Wegscheider and Mansour Shayegan and Thomas Ihn and Klaus Ensslin},
  journal= {arXiv preprint arXiv:2208.10427},
  year   = {2023}
}

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10 pages, 7 figures

Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

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