Related papers: Fractional Quantum Hall Effect at High Fillings in…
Magneto-transport measurements in a wide GaAs quantum well in which we can tune the Fermi energy ($E_F$) to lie in different Landau levels of the two occupied electric subbands reveal a remarkable pattern for the appearance and…
We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs)…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…
The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single to two subband occupancy. In 80…
In the strong magnetic field fractional quantum Hall regime, electrons in a two-dimensional electron system are confined to their lowest Landau level. Because of the macroscopic Landau level degeneracy nearly all physical properties at low…
We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $\nu=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a…
We report the observation of developing fractional quantum Hall states at Landau level filling factors $\nu = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The…
Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($\nu$) display a remarkable dependence on the symmetry of the electron charge…
In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum…
The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb…
We investigate numerically different phases that can occur at half filling in the lowest and the first excited Landau levels in wide-well twodimensional electron systems exposed to a perpendicular magnetic field. Within a twocomponent model…
We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $\nu = 1/3$ and…
It is demonstrated that all observed fractions at moderate Landau level fillings for the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterostructure, at temperatures down to 30mK and in magnetic fields…
It is demonstrated that all observed fractions at moderate Landau level fillings in the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…
We investigate theoretically the fractional quantum Hall effect at half-filling in the lowest Landau level observed in asymmetric wide quantum wells. The asymmetry can be achieved by a potential bias applied between the two sides of the…