Related papers: Strained single-crystal Al2O3 grown layer-by-layer…
High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered…
We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on…
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {\deg}C. In contrast to previous…
Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001)…
Polycrystalline Ba4NbIr3O12 has recently been shown to be a promising spin liquid candidate. We report an easy and reliable method to grow millimeter-sized single crystals of this trimer based spin liquid candidate material with the actual…
A detailed spectroscopic and structural characterization of ultrathin cobalt oxide films grown by O-assisted molecular beam epitaxy on a-Al2O3(0001) single crystals is reported. The experimental results show that the cobalt oxide films…
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L)…
In this paper the state-of-the-art for exploiting the unique physical and chemical properties of crystalline materials and their possible applications for development of crystalline nanocomposites with the tailored anisotropy were…
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx…
Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We…
We report on the synthesis of perovskite SrIrO3 thin films using sputtering technique. Single phase (110) oriented SrIrO$_3$ thin films were epitaxially grown on SrTiO3 (001) substrate. Using off-axis XRD $\theta-2\theta$ scans, we…
We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of…
Monophasic and homogeneous Ni10Zr7 nanocrystalline alloy films were successfully grown at room temperature by co-sputtering in an indigenously developed three-gun DC/RF magnetron sputtering unit. The films could be produced with long-range…
We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2…
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant…
Enhanced (001) anomalous scattering by YBa2Cu3O7-d 50 nm films on SrTiO3 substrates with and without a grain boundary versus temperature is interpreted using crystallographic weights to distinguish it from total electron yield and…
We explore the U-Ge phase diagram using thin film growth by co-deposition of U and Ge via d.c. magnetron sputtering. Using three different single crystal substrates - MgO, CaF$_2$ and SrTiO$_3$ - we have stabilised mixed phase films of…
The structure and microstrucutre of fully-strained BiCrO3 thin films have been investigated by X-rays diffraction and transmission electron microscopy, at room temperature. Interestingly, three structural variants are simultaneously…
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of…
We have grown untwinned YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) films on (110) MgO substrates that were pre-annealed at high temperature in oxygen atmosphere. The annealing results in surface reconstruction with shallow facets, which induce the…