Related papers: Strained single-crystal Al2O3 grown layer-by-layer…
Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were…
The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…
NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…
A model of submonolayer thin film growth is studied, where the attachment of atoms to island edges is hindered by an energy barrier. A novel behavior of the density of islands, N_s, is predicted as a function of flux F and temperature T.…
We report on the first successful growth of single crystals of the noncentrosymmetric superconductor Mo$_3$Al$_2$C obtained by means of a cubic-anvil, high-pressure and high-temperature technique. Composition, structure, and normal-state…
We report the growth of atomically smooth, single crystalline Bi2Se3 thin films on Si(111) by using molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, X-ray photoelectron emission spectroscopy and Raman…
In this paper, we report the growth of NaxCoO2 thin films by pulsed-laser deposition (PLD). It is shown that the concentration of sodium is very sensitive to the substrate temperature and the target-substrate distance due to the evaporation…
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the…
High–quality epitaxial YNixMn1-xO3 thin films have been successfully grown on SrTiO3 (100) (STO) by pulsed laser deposition. X-ray diffraction studies showed that the films deposited on STO are fully c-axis oriented and exhibit…
We present the temperature- and thickness-dependent structural and morphological evolution of strain induced transformations in highly-strained epitaxial BiFeO3 films deposited on LaAlO3 (001) substrates. Using high-resolution X-ray…
Superconducting MgB2 thin films were fabricated on Al2O3(0001) substrates under an ex-situ processing conditions. Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of…
Ultrathin MgB2 superconducting films with a thickness down to 7.5 nm are epitaxially grown on (0001) Al2O3 substrate by hybrid physical-chemical vapor deposition method. The films are phase-pure, oxidation-free and continuous. The 7.5 nm…
As-grown superconducting MgB_2 thin films have been grown on SrTiO_3(001), MgO(001), and Al_2O_3(0001) substrates by a molecular beam epitaxy (MBE) method with novel co-evaporation conditions of low deposition rate in ultra-high vacuum. The…
The intermetallic compound Zr3Al is severely deformed by the method of repeated cold rolling. By X-ray diffraction it is shown that this leads to amorphization. TEM investigations reveal that a homogeneously distributed debris of very small…
Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2…
We introduce a simple method of an MgB2 film preparation using sequential electron-beam evaporation of B-Mg two-layer (followed by in-situ annealing) on the NbN buffered Si(100) substrate. The Transmission Electron Microscopy analyses…
Nanocomposite thin films of Zinc Oxide and Silicon were grown by co-evaporating powdered ZnO and Si. This resulted in nanocrystallites of ZnO being embedded in Silicon. The mismatch in crystal structures of constituent materials result in…
Growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally…
Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material,…
Pulsed laser deposition from a Nd:YAG laser was employed in production of hundreds of nanometer thick quasicrystalline Ti-Zr-Ni films on glass substrate. The influence of deposition temperature Ts on the structure, morphology and…