Related papers: Strained single-crystal Al2O3 grown layer-by-layer…
Single crystal epitaxial thin films of UN and U$_2$N$_3$ have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and…
The formation of pyramid-like structures in thin-film growth on substrates with a quadratic symmetry, e.g., {001} surfaces, is shown to exhibit anisotropic scaling as there exist two length scales with different time dependences. Analytical…
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane…
We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray…
The bulk single crystals of $S = 1$ chain compound Ni(C$_3$H$_{10}$N$_2$)$_2$NO$_2$ClO$_4$ are grown by using a slow evaporation method at a constant temperature and a slow cooling method. It is found that the optimum condition of growing…
MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate…
Heteroepitaxial growth of BaSnO$_3$ (BSO) and Ba$_{1-x}$La$_x$SnO$_3$ (x = 7 %) (LBSO) thin films on different perovskite single crystal (SrTiO$_3$ (001) and SmScO$_3$ (110)) substrates has been achieved by Pulsed Laser Deposition (PLD)…
Island formation in strain-free heteroepitaxial deposition of thin films is analyzed using kinetic Monte Carlo simulations of two minimal lattice models and scaling approaches. The transition from layer-by-layer (LBL) to island (ISL) growth…
Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions…
Blended organic thin films have been studied during the last decades due to their applicability in organic solar cells. Although their optical and electronic features have been examined intensively, there is still lack of detailed knowledge…
Pentacene is known to grow on isotropic silicon oxide surfaces in a substrate-induced phase with fiber textured crystallites. This growth study reports on the growth of pentacene crystallites on uniaxially oriented surfaces. Silica…
In this paper we report the results about the synthesis and characterization of optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3 (100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm. The effect of substrate…
The IR optical absorption (0.1-1.5 eV) in the $La_{0.7}Ca_{0.3}MnO_3$ films on LAO substrate exhibits the drastic temperature evolution of the spectral weight evidencing the insulator to metal transition. Single crystal films were found to…
Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb3+ ion doped…
We report on a strain-induced and temperature dependent uniaxial anisotropy in V$_{2}$O$_{3}$/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent…
Structural, electronic and dielectric properties of high-quality ultrathin BaTiO3 films are investigated. The films, which are grown by ozone-assisted molecular beam epitaxy on Nb-doped SrTiO3 (001) substrates and having thicknesses as thin…
The nitrides of group III metals: AlN, GaN and InN are very important materials due to their applications for short wavelength opto-electronics (light-emitting diodes and laser diodes). It is essential for the realization of such novel…
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis.…
We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two…